the information contained in this document is being issued in advance of the production cycle for the product. the parameters for the product may change before final production or nec electronics corporation, at its own discretion, may withdraw the product prior to its production. not all products and/or types are availabe in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor 2sK3322 switching n-channel power mos fet data sheet document no. d14114ej2v0ds00 (2nd edition) date published august 2003 ns cp(k) printed in japan 1999, 2000 the mark shows major revised points. description the 2sK3322 is n-channel dmos fet device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, ac adapter. features ? low gate charge : q g = 15 nc typ. (v dd = 450 v, v gs = 10 v, i d = 5.5 a) ? gate voltage rating : 30 v ? low on-state resistance : r ds(on) = 2.2 ? max. (v gs = 10 v, i d = 2.8 a) ? avalanche capability ratings ? surface mount package available absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss 600 v gate to source voltage (v ds = 0 v) v gss 30 v drain current (dc) (t c = 25c) i d(dc) 5.5 a drain current (pulse) note1 i d(pulse) 20 a total power dissipation (t a = 25c) p t1 1.5 w total power dissipation (t c = 25c) p t2 65 w channel temperature t ch 150 c storage temperature t stg ? 55 to +150 c single avalanche current note2 i as 4.0 a single avalanche energy note2 e as 10.7 mj notes 1. pw 10 s, duty cycle 1% 2. starting t ch = 25c, v dd = 150 v, r g = 25 ? , v gs = 20 0 v ordering information part number package 2sK3322 to-220ab (mp-25) 2sK3322-s to-262 2sK3322-zj to-263(mp-25zj) 2sK3322-zk to-263(mp-25zk)
data sheet d14114ej2v0ds 2 2sK3322 electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 600 v, v gs = 0 v 100 a gate leakage current i gss v gs = 30 v, v ds = 0 v 10 a gate cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 2.5 3.5 v forward transfer admittance note | y fs | v ds = 10 v, i d = 2.8 a 1.0 s drain to source on-state resistance note r ds(on) v gs = 10 v, i d = 2.8 a 1.7 2.2 ? input capacitance c iss v ds = 10 v, 550 pf output capacitance c oss v gs = 0 v, 115 pf reverse transfer capacitance c rss f = 1 mhz 13 pf turn-on delay time t d(on) v dd = 150 v, i d = 2.8 a, 12 ns rise time t r v gs = 10 v, 10 ns turn-off delay time t d(off) r g = 10 ? 35 ns fall time t f 12 ns total gate charge q g v dd = 450 v, 15 nc gate to source charge q gs v gs = 10 v, 4 nc gate to drain charge q gd i d = 5.5 a 4.4 nc body diode forward voltage note v f(s-d) i f = 5.5 a, v gs = 0 v 1.0 v reverse recovery time t rr i f = 5.5 a, v gs = 0 v, 1.6 s reverse recovery charge q rr di/dt = 50 a/ s 5.3 c note pulsed test circuit 1 avalanche capability r g = 25 ? 50 ? pg. l v dd v gs = 20 0 v bv dss i as i d v ds starting t ch v dd d.u.t. test circuit 3 gate charge test circuit 2 switching time pg. r g 0 v gs d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form i d wave form v gs 10% 90% v gs 10% 0 i d 90% 90% t d(on) t r t d(off) t f 10% i d 0 t on t off pg. 50 ? d.u.t. r l v dd i g = 2 ma
data sheet d14114ej2v0ds 3 2sK3322 typical characteristics (t a = 25c) drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a 10 40 50 20 30 5 10 0 0 8.0 v 6.0 v pulsed v gs = 10 v forward transfer characteristics v gs - gate to source voltage - v i d - drain current - a 15 10 5 0 100 10 1 0.1 0.01 v ds = 10 v pulsed t ch = 125 ?c 75 ?c 25 ?c ? 25 ?c gate to source cut-off voltage vs. channel temperature t ch - channel temperature - ?c v gs(off) - gate to source cut-off voltage - v ? 50 0 50 100 150 5 4 3 2 1 0 v ds = 10 v i d = 1 ma forward transfer admittance vs. drain current 110 i d - drain current - a | y fs | - forward transfer admittance - s 10 0.1 1 0.1 v ds = 10 v pulsed t ch = ? 25?c 25?c 75?c 125?c drain to source on-state resistance vs. gate to source voltage 10 2 v gs - gate to source voltage - v r ds (on) - drain to source on-state resistance - ? 1 0 515 0 3 i d = 4.0 a pulsed 2.8 a drain to source on-state resistance vs. drain current 1 0.1 1 10 100 i d - drain current - a r ds(on) - drain to source on-state resistance - ? 2 0 3 v gs = 10 v pulsed 20 v
data sheet d14114ej2v0ds 4 2sK3322 drain to source on-state resistance vs. channel temperature 50 150 r ds (on) - drain to source on-state resistance - ? 2 0 0 100 ? 50 t ch - channel temperature - ?c 3 1 v gs = 10 v pulsed 4 2.8 a i d = 4.0 a source to drain diode forward voltage v sd - source to drain voltage - v i sd - diode forward current - a 1.5 1 0.5 0 100 10 0 0.1 0.01 pulsed 0 v v gs = 10 v 100 10 1 0.1 10000 capacitance vs. drain to source voltage c iss , c oss , c rss - capacitance - pf 1000 100 10 1 v gs = 0 v f = 1 mh z v ds - drain to source voltage - v c iss c oss c rss switching characteristics 0.1 1 10 i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 100 10 1 0.1 v dd = 150 v v gs = 10 v r g = 10 ? t d(off) t d(on) t f t r reverse recovery time vs. drain current 0.1 1 10 t rr - reverse recovery time - ns 0.01 i d - drain current - a 10000 1000 100 10 di/dt = 50 a/ s v gs = 0 v q g - gate charge - nc v ds - drain to source voltage - v 0 0 8 41216 600 400 200 dynamic input/output characteristics v gs - gate to source voltage - v 16 14 12 10 8 6 4 2 0 i d = 4.0 a v dd = 450 v 300 v 150 v v ds v gs
data sheet d14114ej2v0ds 5 2sK3322 derating factor of forward bias safe operating area t ch - channel temperature - ?c dt - percentage of rated power - % 040 20 60 100 140 80 120 160 100 80 60 40 20 0 t c - case temperature - ?c p t - total power dissipation - w 0 0 80 20 40 60 100 140 120 160 10 20 30 40 50 60 70 total power dissipation vs. case temperature forward bias safe operating area 10 100 1000 i d - drain current - a 1 v ds - drain to source voltage - v 0.1 1 10 100 power dissipation limited pw = 10 s 100 s 10 ms 1 ms r ds (on) limited i d(pulse) i d(dc) t c = 25 ?c single pulse pw - pulse width - sec transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - ?c /w 10 0.01 0.1 1 100 1000 1 m 10 m 100 m 1 10 100 1000 single pulse 10 100 r th(ch-c) = 1.93 ?c /w r th(ch-a) = 83.3 ?c /w
data sheet d14114ej2v0ds 6 2sK3322 single avalanche current vs. inductive load 100 1 m 10 m 100 l - inductive load - h i as - single avalanche current - a 1.0 10 0.1 10 r g = 25 ? v dd = 150 v v gs = 20 v 0 v starting t ch = 25 ?c e as = 10.7 mj i as = 4.0 a single avalanche energy derating factor 75 150 125 starting t ch - starting channel temperature - ?c energy derating factor - % 50 100 25 v dd = 150 v r g = 25 ? v gs = 20 v 0 v i as 4.0 a 100 80 60 40 20 0
data sheet d14114ej2v0ds 7 2sK3322 package drawings (unit: mm) 1) to-220ab (mp-25) 2) to-262 4.8 max. 1.gate 2.drain 3.source 4.fin (drain) 1 2 3 10.6 max. 10.0 typ. 3.6?.2 4 3.0?.3 1.3?.2 0.75?.1 2.54 typ. 2.54 typ. 5.9 min. 6.0 max. 15.5 max. 12.7 min. 1.3?.2 0.5?.2 2.8?.2 4.8 max. 1.gate 2.drain 3.source 4.fin (drain) 1 2 3 10 typ. 1.3?.2 0.75?.3 2.54 typ. 2.54 typ. 8.5 0.2 12.7 min. 1.3?.2 0.5?.2 2.8?.2 1.0?.5 4 3) to-263 (mp-25zj) 4) to-263 (mp-25zk) 1.4?.2 1.0?.5 2.54 typ. 2.54 typ. 8.5?.2 123 5.7?.4 4 4.8 max. 1.3? .2 0.5?. 2 1.gate 2.drain 3.source 4.fin (drain) 0.7?.2 10 typ. 0.5r typ. 0.8r typ. 2 .8?.2 10.0?.3 8.0 typ. 2.54 0.75?.2 9.15?.3 2.54?.25 15.25?.5 1.35?.3 123 4 2.5 4.45?.2 1.3?.2 0.5?.2 0 to 8 o 1.gate 2.drain 3.source 4.fin (drain) no plating 7.88 min. 0.025 to 0.25 0.25 equivalent circuit source bod y diod e g ate p rotection d iode g ate drain remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
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